کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1788256 1023465 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing
چکیده انگلیسی

(Ba,Sr)TiO3 (BST) thin film with a perovskite structure has a potential for the practical applications in various functional devices. Normally, the BST thin films derived from sol–gel and sputtering are amorphous or partially crystalline when processed below 700 °C. For the purpose of integrating BST thin film directly into system-on-package (SoP), it is necessary to process the BST film below 350 °C. The electrical properties of low-temperature crystallized BST film were studied in this paper. The BST thin films have been crystallized at 300 °C by excimer laser annealing (ELA). The BST films were exhibited in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss and low leakage current density. As a result, we demonstrated crystallized BST thin film which has permittivity of 143, dielectric loss of 0.028 and leakage current density of 0.9 μA/cm2 below 300 °C.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 11, Issue 3, Supplement, May 2011, Pages S66–S69
نویسندگان
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