کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1789311 | 1023502 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabricating high performance n-channel lateral double diffused metal–oxide–semiconductor transistors utilizing the shallow trench isolation as a salicide blocking mask of the drift region
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabricating high performance n-channel lateral double diffused metal–oxide–semiconductor transistors utilizing the shallow trench isolation as a salicide blocking mask of the drift region Fabricating high performance n-channel lateral double diffused metal–oxide–semiconductor transistors utilizing the shallow trench isolation as a salicide blocking mask of the drift region](/preview/png/1789311.png)
چکیده انگلیسی
In this paper, the improved characteristics of 10 V tolerant high-voltage n-channel lateral double diffused metal–oxide–semiconductor (LDMOS) devices, using a pure 0.25 μm standard low-voltage complementary metal–oxide–semiconductor (CMOS) logic process with dual gate oxide, are described. The fabricated transistors showed about 30% better current driving characteristics and about 40% higher drain operating voltage than previous reports of these kinds of devices. The transistors maintained a breakdown voltage, BVDSS, over 14 V. These devices also showed good sub-threshold characteristics. This paper describes the cost-effective and high performance n-channel high-voltage LDMOS using a pure low-voltage standard CMOS logic process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 9, Issue 1, January 2009, Pages 9–12
Journal: Current Applied Physics - Volume 9, Issue 1, January 2009, Pages 9–12
نویسندگان
Kee-Yeol Na, Yeong-Seuk Kim,