کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1789321 | 1023502 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and characterization of F doped SnO2 films and electrochromic properties of FTO/NiO films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The dependence of structural and electrical properties of SnO2 films, prepared using spray pyrolysis technique, on the concentration of fluorine is reported. X-ray diffraction, FTIR and scanning electron microscope (SEM) studies have been performed on SnO2:F (FTO) films coated on glass substrates. Measured values of Hall coefficient and resistivity are reported. The 7.5 m% of F doped film had a resistivity of 15 × 10−4 Ω cm, carrier density of 18.7 × 1019 cm−3 and mobility of 21.86 cm2 V−1 S−1. The NiO film was coated on an FTO substrate and its electrochromic (EC) behavior was studied and the results are reported and discussed in this paper.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 9, Issue 1, January 2009, Pages 67–72
Journal: Current Applied Physics - Volume 9, Issue 1, January 2009, Pages 67–72
نویسندگان
K.K. Purushothaman, M. Dhanashankar, G. Muralidharan,