Strain-driven synthesis of 〈112〉 direction InAs nanowires in V-grooved trenches on Si using InP/GaAs buffer layers

The catalyst-free metal organic vapor phase epitaxial growth of InAs nanowires on silicon (001) substrates is investigated by using selectively grown InP/GaAs buffer layers in V-grooved trenches. A strain-driven mechanism of self-aligned 〈112〉 direction InAs nanowires growing is proposed and demonstrated by the transmission electron microscopy measurement. The morphology of InAs nanowires is tapered in diameter and exhibits a hexagonal cross-section. The defect-free InAs nanowire shows a pure zinc blende crystal structure and an epitaxial relationship with InP buffer layer.