کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1789563 1524382 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Disposal of metal fragments released during polycrystalline slicing by multi-wire saw
ترجمه فارسی عنوان
دفع قطعات فلزی که در زمان برش چند قطعه سیلیسی توسط میله چند منظوره آزاد می شود
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
چکیده انگلیسی


• The management of PEG and used SiC wastes present a major challenge in the photovoltaic manufacturing industry.
• The feasibility to separate Si and SiC from kerf slurry waste has been demonstrated.
• Magnetic separation and centrifugation methods were adopted for metals removal.
• Basic methods were performed in order to evaluate the efficiency of the process undertaken.

The environmental and economic impacts linked with solar systems are largely based on discharges of slurry generated during the various stages of sawing and cutting ingots. These discharges into the environment are subject to the general regulations on hazardous and special industrial waste disposal. Therefore, they should not be abandoned or burned in open air. The cutting of Silicon ingots leads to the production of Silicon wafers additional costs, losing more than 30% of Silicon material. Abrasive grains (Silicon Carbide) trapped between the wire and the block of Silicon need to be removed by various mechanisms to be later evacuated by slurry fragments. In the interest of decreasing operational costs during polycrystalline ingot slicing at Semiconductors Research Center, and, avoid environmental problems; it is necessary to recover the solar grade Silicon from the Silicon sawing waste. For this reason, the removal of metal fragments has become a preliminary requirement to regenerate the slurry; in addition, the solid phase needs to be separated from the liquid phase after the dissolution PEG with the solvent. In the present study, magnetic separation and centrifugation methods were adopted for metals removal, followed by the analysis of some operating parameters such as: washing time, pH, and initial concentration of Silicon. Finally, analytical, morphological and basic methods were performed in order to evaluate the efficiency of the process undertaken.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 447, 1 August 2016, Pages 27–30
نویسندگان
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