کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1789670 | 1524387 | 2016 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature dependency of the Ga/In distribution in Cu(In,Ga)Se2 absorbers in high temperature processes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Temperature dependency of the Ga/In distribution in Cu(In,Ga)Se2 absorbers in high temperature processes Temperature dependency of the Ga/In distribution in Cu(In,Ga)Se2 absorbers in high temperature processes](/preview/png/1789670.png)
چکیده انگلیسی
The current article reports about the influence of temperature and glass substrate on Ga/In interdiffusion and chalcopyrite phase formation in the stacked elemental layer process. According to the Shockley-Queisser limit the optimum for single junction devices is near 1.4Â eV, which is strongly coupled on the Ga/(Ga+In) ratio of Cu(In,Ga)Se2 thin film solar cells. To increase the Ga content in the active region of the Cu(In,Ga)Se2 a 70:30 CuGa alloy target is used. An increase of the selenization temperature leads to a more homogeneous Ga/In distribution and a less pronounced Ga agglomeration at the back contact. The Ga/In interdiffusion rates for different selenization temperatures and substrates were estimated with the model of a two layer system. At the highest selenization temperature used an absorber band gap of 1.12Â eV was realized, which is similar to typical values of absorbers produced during the co-evaporation process. The Na diffusion into the Cu(In,Ga)Se2 is weakly temperature dependent but strongly influenced by the choice of the glass substrate composition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 442, 15 May 2016, Pages 31-40
Journal: Journal of Crystal Growth - Volume 442, 15 May 2016, Pages 31-40
نویسندگان
B.J. Mueller, T. Demes, P.C. Lill, V. Haug, F. Hergert, S. Zweigart, U. Herr,