کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1789739 | 1524398 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Single-crystalline semipolar GaN on Si(001) using a directional sputtered AlN intermediate layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Single-crystalline semipolar GaN on Si(001) using a directional sputtered AlN intermediate layer Single-crystalline semipolar GaN on Si(001) using a directional sputtered AlN intermediate layer](/preview/png/1789739.png)
چکیده انگلیسی
We obtained single-crystalline semipolar (101¯3)GaN on a nominal Si(001) substrate with sputtered AlN using the directional feature of sputtering. One dominated orientation of AlN was chosen to set Si[110] in the direction of the deposition. Microscopic characterizations using electron backscattering diffraction and macroscopic characterizations using X-ray diffraction revealed that GaN has an epitaxial relationship, which corresponds to [101¯3]GaN||[001]Si and [112¯0]GaN||[11¯0]Si. The density of the stacking fault in GaN with low temperature AlN insertion was estimated to be 3Ã104 cmâ1 using transmission electron microscopy. Directional sputtering is a promising method that can be applied to the next generation of “GaN-on-Si” technologies for obtaining single-crystalline semipolar GaN on a Si(001) substrate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 431, 1 December 2015, Pages 60-63
Journal: Journal of Crystal Growth - Volume 431, 1 December 2015, Pages 60-63
نویسندگان
T. Mitsunari, H.J. Lee, Y. Honda, H. Amano,