کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1789772 1524393 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
AlN thin film grown on different substrates by hydride vapor phase epitaxy
ترجمه فارسی عنوان
آلومینیوم نازک بافت های اپیداتیک فاز بخار هیدرید در بستر های مختلف رشد می کند
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
چکیده انگلیسی
AlN thin films have been grown on GaN/sapphire templates, 6 H-SiC and sapphire by hydride vapor phase epitaxy. The influence of growth conditions and substrates on the crystal qualities and growth mode has been investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results showed that the low pressure was favorable for high-quality AlN thin film growth around 1000 °C. The full-width at half-maximum (FWHM) of (0002) XRD of 200-nm AlN thin film grown on GaN/sapphire, 6 H-SiC and sapphire are 220, 187 and 260 arc s, respectively. While the corresponding counterparts of (10-12) are 1300, 662 and 2650 arc s, respectively. Both suggested that low dislocation density in AlN grown on 6 H-SiC. The morphology of AlN thin film on sapphire showed islands without coalescence initially, and then changed to be coalescent with atomic steps at 1200 nm. However, those for samples on 6 H-SiC and GaN/sapphire showed smooth surface with clear atomic steps at thickness of 200 nm. The result indicated different growth modes of AlN on different substrates. It was believed that the different lattice mismatchs between AlN and substrates led to the different crystal qualities and growth modes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 436, 15 February 2016, Pages 62-67
نویسندگان
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