A study of the growth rate of GaSb using TEGa and TMSb or TESb

The growth rate of gallium antimonide using triethylgallium and either trimethylantimony or triethylantimony has been studied over a wide temperature range, from 475 to 675 °C. In contrast to earlier reports of the growth being diffusion controlled when trimethylantimony is used, we find that it is kinetically controlled at temperatures below 650 °C. The growth rate of gallium antimonide when trietylantimony is used varies in a complex way with temperature but is ultimately diffusion controlled above 650 °C, with both trimethylantimony and triethylantimony yielding the same growth rate. For comparison, the growth rate of gallium arsenide was studied with triethylgallium and arsine or tertiarybutylarsine, and with trimethylgallium and arsine: in both case, it is diffusion controlled in the entire temperature range studied. However, the diffusion controlled growth rate of gallium antimonide predicted from the gallium arsenide growth rate is lower than what is experimentally observed.