کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1789944 1524402 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation of SrCoOx thin films on LaAlO3 substrate and their reversible redox process at moderate temperatures
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Preparation of SrCoOx thin films on LaAlO3 substrate and their reversible redox process at moderate temperatures
چکیده انگلیسی


• Thin films of SrCoOx have been prepared on LaAlO3 and SrTiO3 substrates.
• Negative lattice mismatch is in favor of stabilizing Co4+.
• High oxygen mobility retains in tetragonal SrCoOx films.

Using magnetron sputtering and annealing techniques, we have prepared SrCoOx films on LaAlO3 and SrTiO3 substrates. Distinctly different structures of the films have been found on the two substrates. It is suggested that positive lattice mismatch between film and substrate promotes SrCoO2.5 films with an orthorhombic structure grown on SrTiO3 substrate, whereas negative lattice mismatch from LaAlO3 substrate is in favor of increasing the valence state of Co and thus the growth of oxygen-rich SrCoOx with a tetragonal structure. In addition to the structural characterization, magnetic and electrical measurements confirm that the oxygen content x is between 2.75 and 2.88 for the latter. Reversibility of the topotactic phase transformation between SrCoO2.5 and the oxygen-rich SrCoOx films has also been studied by changing the oxygen pressure during annealing process. Even in the presence of a negative lattice mismatch, the results reveal that the tetragonal SrCoOx films on LaAlO3 substrate retain high oxygen mobility identified before in cubic SrCoOx films.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 427, 1 October 2015, Pages 36–41
نویسندگان
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