کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1789966 1524405 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures
چکیده انگلیسی


• We studied diodes based on GaSb/GaAs samples grown by Interfacial Misfit Technique.
• We show that possible defect compensation is observed with the annealing treatments.
• The turn on voltage of devices decreases as the annealing temperature increases.
• The results showed that the annealing improves the electrical properties of devices.

Post-growth annealing treatments in the range 400–600 °C are performed on GaSb/GaAs Interfacial Misfit grown samples. Current density–voltage (J–V), Capacitance–voltage (C–V), capacitance–frequency (C–F) and Deep Level Transient Spectroscopy (DLTS) measurements are performed on as-grown and annealed samples. Our studies show that possible defect compensation is observed with the annealing treatments, resulting in a significant improvement in the performances of the devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 424, 15 August 2015, Pages 5–10
نویسندگان
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