Ferroelectric domain structures of epitaxial CaBi2Nb2O9 thin films on single crystalline Nb doped (1 0 0) SrTiO3 substrates

• CaBi2Nb2O9 (CBNO) is a potential candidate for lead-free ferroelectric materials.
• Epitaxial (0 0 l) CBNO thin films were fabricated on Nb-doped SrTiO3 substrates by PLD.
• The CBNO thin film exhibited a good ferroelectric property and fatigue performance.
• Relatively large ferroelectric domain structure was observed, compared to PbTiO3.

Epitaxial CaBi2Nb2O9 (CBNO) thin films were deposited on Nb-doped SrTiO3 substrates. The CBNO thin films as a lead-free ferroelectric material exhibit a good ferroelectric property with the remanent polarization of 10.6 μC/cm2. In the fatigue resistance test, the CBNO thin films have no degradation in polarization up to 1×1012 switching cycles, which is applicable for non-volatile ferroelectric random access memories (FeRAMs). Furthermore, piezoresponse force microscopy study (PFM) reveals that the CBNO thin films have larger ferroelectric domain structures than those of PbTiO3 thin films. From the Landau, Lifshiftz, and Kittel׳s scaling law, it is inferred that the domain wall energy of CBNO thin films is probably very similar to that of the PbTiO3 thin films.