Growth, optical, thermal and laser damage threshold studies of 4-aminopyridinium 4-nitrophenolate 4-nitrophenol crystal

• Bulk crystal of 4AP4NP is grown by the slow evaporation technique
• Laser damage threshold is found to be 3.67 GW cm−2
• Dielectric tensor coefficients ε11, ε22, ε33 and ε13 have been calculated
• Specific heat capacity (Cp) of 4AP4NP is measured.
• SHG output of 4AP4NP is measured.

Organic nonlinear optical (NLO) single crystals of 4-aminopyridinium 4-nitrophenolate 4-nitrophenol (4AP4NP) were grown by the slow evaporation solution growth technique. The unit cell parameters and space group of 4AP4NP crystal were found out by single crystal X-ray diffraction analysis. From the UV–vis–NIR spectral studies, the lower cut-off wavelength of the grown crystal was found to be 474 nm. The laser damage threshold study shows that 4AP4NP crystal withstands the laser radiation up to 3.67 GW cm−2. Thermogravimetric and differential thermal analyses revealed that 4AP4ANP is thermally stable up to 175 °C. The specific heat capacity of 4AP4NP was measured to be 3.9135 J g−1 K−1 at 33 °C. Kurtz and Perry powder study reveals that 4AP4NP is a phase-matchable NLO material. The four independent tensor coefficients of dielectric permittivity were found to be ε11=25.09, ε22=25.84, ε33=26.69 and ε13=0.8 from the dielectric measurement.