MOVPE grown periodic AlN/BAlN heterostructure with high boron content

• Five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE.
• Good periodicity of two alternative layers has been observed by both SIMS profile and Z-contrast HAADF-STEM images.
• Crystalline features of this heterostructure have been investigated. BAlN with 11% boron has 5 nm monocrystalline thickness and tends to be columnar polycrystalline.
• The BAlN layers exhibit an emission peak by CL and absorption edge at around 260 nm.

Five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE. Good periodicity of two alternative layers has been observed by both SIMS profile and Z-contrast HAADF-STEM images. The BAlN layers demonstrate columnar polycrystalline feature. The BAlN layers exhibit an emission peak by CL and absorption edge in transmission spectra at around 260 nm. The results enable the development of BAlGaN based multi-layered heterostructure for UV and deep UV applications.