Deposition of pure gold thin films from organometallic precursors

• Seven dimethylgold(III) complexes with different types of chelating organic ligands have been screened as precursors for gold MOCVD within a wide range of experimental conditions.
• Gold films of >99 at% purity were obtained during photostimulated (VUV) deposition.
• Combination of VUV and H2 resulted in the highest growth rates.
• Presence of H2 raised the growth rate and porosity of the films significantly with decreased amount of any impurities and texture.

Using metallorganic chemical vapor deposition, pure gold thin films have been obtained from a number of volatile dimethylgold(III) complexes with different types of chelating organic ligands. Deposition was performed in argon (10 Torr) with and without hydrogen and oxygen as reactant gases and with additional VUV (vacuum ultraviolet) stimulation. According to the XRD phase analysis, gold films grow mainly in [111] direction. The influence of precursor structure on the morphology of the deposited layers was demonstrated. It was established that presence of H2 raises the growth rate and porosity of the films significantly with decreased amount of any impurities. With the VUV stimulation, the gold content in the films amounts to >99 at%.