Optimization of power control in the reduction of basal plane dislocations during PVT growth of 4H-SiC single crystals

• Multiplication of basal plane dislocations is tracked by 3D Alexander–Haasen model.
• Optimization of power history during growth is crucial for the reduction of BPDs.
• Constant low-power history can produce lowest BPDs.
• Concave continuously increasing power can produce low BPDs with high growth rate.

The influence of power control on the multiplication of basal plane dislocations (BPDs) during PVT growth of 4H-SiC single crystals was studied by numerical modeling. Three sets of different power histories during growth were tested: continuously increasing power, continuously decreasing power, and constant power. The results show that optimization of the power history control is crucial for the reduction of basal plane dislocations during growth. If only low BPD density is concerned, then constant low power is the best choice. However, if both low BPD density and high growth rate are desirable, then concave continuously increasing power is the best choice.