On the detachment of Si ingots from SiO2 crucibles

An extended simulation is carried out; taking into account the thermo-elastic stresses induced by the difference in thermal expansion coefficients of the crucible and ingot materials that are attached on small areas. The model compares the remaining elastic energy to the adhesion energy between the silicon and the crucible, in order to predict the temperature at which the Si detaches from the crucible in case of sticking. Two configurations are compared in terms of amount of stresses and extent of the ingot volume likely to be impacted by dislocation generation.