Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition

• High oriented Ga2O3 film was obtained at low substrate temperatures by PLD.
• From surface morphology, crystallization process was observed clearly.
• The films have high transmittance and smooth surface.

Ga2O3 films were deposited on (0001) sapphire substrates by means of pulsed laser deposition (PLD). The influences of substrate temperature on crystal quality, surface morphology, and transmittance have been systematically investigated by means of X-ray diffraction, atomic force microscope and spectrophotometer. The results show that all of the films have high transmittance and smooth surface. The (−201) oriented β-Ga2O3 can be obtained at substrate temperature of 500 °C, which is lower than the growth temperature by other method such as molecular beam epitaxy, indicating PLD is a promising growth technology for growing high quality β-Ga2O3 films at low temperature.