کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1790675 1524447 2013 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Nucleation and growth in amorphous (GeS2)0.9(Sb2S3)0.1 thin films
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Nucleation and growth in amorphous (GeS2)0.9(Sb2S3)0.1 thin films
چکیده انگلیسی


• An image analysis technique was developed to count the number of crystals in polarized micrographs with the objective of obtaining nucleation data.
• The nucleation data, obtained from a double stage process suggests that classical nucleation theory is applicable.
• The growth data can be described by a 2D nucleated growth model.
• Isothermal growth and nucleation curves were obtained using classical models.

The rates of isothermal nucleation and growth in chalcogenide glass thin films of (GeS2)0.9(Sb2S3)0.1 were studied using optical microscopy. Nucleation data was obtained from double stage heat treatment, followed by image analysis of polarized optical micrographs. The applicability of classical nucleation theory (CNT) to the nucleation data has been discussed. The growth data, corrected for viscosity suggest interface controlled 2D nucleated growth of β-GeS2 crystals. The isothermal curves of nucleation and growth determined by CNT and 2D nucleated growth model, respectively were found to be weakly intersecting. The nucleation curve had maxima at 350 °C, which is below the glass transition temperature, while the growth curve had a peak at 439 °C.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 382, 1 November 2013, Pages 87–93
نویسندگان
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