Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells

► B-doped BaSi2 films were grown by molecular beam epitaxy. ► B-doped BaSi2 showed p-type conductivity. ► The hole concentration was controlled in the range between 1017 and 1019 cm−3. ► The acceptor level was approximately 23 meV.