Synthesis and characterization of N, In co-doped MgZnO films using remote-plasma-enhanced metalorganic chemical vapor deposition

We report the synthesis and characterization of MgZnO films co-doped with N and In using remote-plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD). X-ray diffraction (XRD) analysis revealed the hexagonal wurtzite structure of the films. The film quality gradually degrades with increasing In content (y) and also with annealing at 800 °C for 1 min. A bandgap narrowing of 50 meV was observed for N, In co-doped MgZnO film with an In content y=0.52% compared to N-doped MgZnO, which indicated the formation of a shallow N-acceptor band. Both N-doped MgZnO and N, In co-doped MgZnO films showed p-type conductivity. The N, In co-doped MgZnO films showed higher hole concentration and lower resistivity compared to N-doped MgZnO. A p-type conductivity with a high hole concentration of 7.8×1017-3.6×1018 cm−3, low resistivity of 15-16 Ωcm, and mobility of 0.11-0.5 cm2/Vs was achieved for four different measurements of N, In co-doped MgZnO film with In content y=0.52%. The N-doped MgZnO film annealed at 800 °C for 1 min showed an increase of hole concentration and decrease of resistivity compared to as-grown film. However, the transformation of conduction type from p-type to n-type was observed for N, In co-doped MgZnO films with annealing at 800 °C for 1 min.