کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1791072 | 1524459 | 2013 | 4 صفحه PDF | دانلود رایگان |
The effects of Si doping on the structural properties of a high-quality AlN layer grown on a trench-patterned AlN/sapphire by metalorganic vapor phase epitaxy (MOVPE) were systematically studied. With a high Si doping concentration, void formation became much slower than that in undoped AlN film. This phenomenon was attributed to the anti-surfactant effect of Si in the growth process. Moreover, as the Si doping concentration increased, compressive stress was significantly relaxed in Si-doped AlN films. A high Si doping concentration of 1×1018 cm−3 was successfully achieved for AlN grown at 1500 °C.
► High-quality AlN layers were grown on a trench-patterned AlN/sapphire by MOVPE.
► With Si doping in AlN, the anti-surfactant effect was observed.
► With increasing CH3SiH3 flow rate, compressive stress was significantly relaxed in the AlN layer.
► Si doping with concentration of 1×1018 cm−3 was successfully achieved for AlN grown at 1500 °C.
Journal: Journal of Crystal Growth - Volume 370, 1 May 2013, Pages 74–77