Comparative numerical study of the effects of rotating and traveling magnetic fields on the carbon transport in the solution growth of SiC crystals

We present numerical simulations of the high temperature solution growth (HTSG) of silicon carbide (SiC) crystals. From a global simulation model, we investigate the influence of rotating magnetic fields (RMFs) and traveling magnetic fields (TMFs) on the crystal growth rate. The results reveal that heat and mass transfers are affected by magnetic fields. We show that direction of the solute flux must be controlled to increase the growth rate. For example, in presence of TMFs directed downwards the growth rate increases up to three times compared with the pure thermal HTSG. The proposed HTSG system coupled with magnetic fields has the same growth rate possibility as in the sublimation technique.

► Global modeling of the crystal growth of silicon carbide from a silicon melt.
► We model the impact of different types of magnetic fields on the crystal growth rate.
► Growth rate dramatically increases with traveling magnetic fields.
► The proposed system has the same growth rate potential as in the sublimation process.
► Growth rate is not improved at high magnetic fields due to intense convective mixing.