Germanium-doped crystalline silicon: A new substrate for photovoltaic application

Germanium (Ge)-doped crystalline silicon has attracted much attention in recent years, due to its promising properties for meeting the increasing requirements for photovoltaic applications. This paper has reviewed our recent results on Ge-doped crystalline silicon and corresponding solar cells. It includes that Ge doping improves the fracture strength of crystalline silicon, and suppresses the Boron–Oxygen (B–O) defects responsible for the light induced degradation (LID) of carrier lifetime. Ge doping in crystalline silicon will not only benefit for reduction of breakage during the cell fabrication processes, but also improve the solar cell efficiency and the power output of corresponding modules under sunlight illumination.

► Ge doping improves the fracture strength of crystalline silicon.
► Ge doping suppresses the Boron–Oxygen (B–O) defects in crystalline silicon.
► Ge doping stablizes the module power output under sunlight illumination.