Thermodynamic approach to the synthesis of silicon carbide using tetramethylsilane as the precursor at high temperature

Tetramethylsilane (TMS) is commonly used as a precursor in the production of SiC(β) films at relatively low temperatures. However, because TMS contains much more C than Si, it is difficult to produce solid phase SiC at high temperatures. In an attempt to develop a more efficient TMS-based SiC(α) process, computational thermodynamic simulations were performed under various temperatures, working pressures and TMS/H2 ratios. The findings indicate that each solid phase has a different dependency on the H2 concentration. Consequently, a high H2 concentration results in the formation of a single, solid phase SiC region at high temperatures. Finally, TMS appears to be useful as a precursor for the high temperature production of SiC(α).

► A novel high temperature SiC synthesis from tetramethylsilane was thermodynamically simulated.
► The etching temperature of solid C was strongly affected by the H2 concentration.
► The etching temperature of solid SiC was relatively less dependent on the H2 concentration.
► SiC synthesis at high temperature was expected under high pressure with high H2 concentration.