HfxZr1−xO2 films chemical vapor deposited from a single source precursor of anhydrous HfxZr1−x(NO3)4

A single-source precursor HfxZr1−x(NO3)4 (HZN) has been successfully synthesized, and used for chemical vapor deposition of HfxZr1−xO2 films. X-ray photoelectron spectroscopy (XPS) measurement shows that Hf/Zr ratio in the HfxZr1−xO2 films is in good agreement with that in the precursor determined by inductive coupled plasma (ICP) measurement, indicating precise composition transfer from the precursor to deposited films. Basic characteristics of the HfxZr1−xO2 films such as chemical bonding, composition, film structure, band gap and electrical properties etc. were carried out using different analysis techniques.

► A single-source precursor HfxZr1−x(NO3)4 have been used for CVD process, which have rarely been reported previously.
► Hf/Zr ratio in the HfxZr1−xO2 films CVD from HfxZr1−x(NO3)4 precursor is in good agreement with that in the precursor, indicating precise composition transfer from the precursor to deposited films.
► Chemical bonding, composition, film structure, band gap and electrical properties of HfxZr1−xO2 films have been studied in this paper.