کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1791650 1023616 2012 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters
چکیده انگلیسی

Our study of samples grown in different metalorganic chemical vapor deposition reactors and with different growth conditions reveals that V-pits are always present in (InxAl1−x)N films whatever the layer thickness and the InN content. V-pits are empty inverted pyramids terminating threading dislocations. InN-rich triangular regions are present around the threading dislocations terminated by pits with a hexagonal 6-fold symmetry distribution in {11−20} planes. The nature of the facets of the V-pits depends on the growth conditions: pits with either {11−2l}, l being between 1 and 3, or {1−101} facets have been observed. Moreover, the nature of the threading dislocations terminated by pits also depends on the growth conditions. Our observations suggest that with a high V/III ratio only edge a+c-type dislocations are terminated by pits whereas with a low V/III ratio both edge a-type and mixed a+c-type dislocations are terminated by pits.


► MOCVD-grown AlInN films are studied by TEM.
► V-pits empty inverted pyramids terminate threading dislocations.
► In-rich triangular regions are present around dislocations.
► The facets of the V-pits depends off the growth conditions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 353, Issue 1, 15 August 2012, Pages 108–114
نویسندگان
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