Solution growth of In-doped CdMnTe crystals by the vertical Bridgman method with the ACRT technique

Cd1−xMnxTe (CdMnTe) crystals were grown by the solution technique using Te as a solvent and the growth was performed in a vertical Bridgman arrangement with the accelerated crucible rotation technique (ACRT). Ingot in the diameter of 30 mm and length of 60 mm was obtained. As-grown crystals showed a resistivity of 2.065×1010 Ω cm and mobility life time product of electrons of 1.61×10−3 cm2 V−1. PL spectrum and IR transmittance measurements revealed that the as-grown CdMnTe possessed high crystalline quality. A CdMnTe detector was fabricated with planar configuration structure, which showed a resolution of 12.51% of the 241Am at 59.5 keV peak. In conclusion, the Te solution vertical Bridgman technique was proved to be a practical way to effectively reduce the twins in CdMnTe crystal and to produce high quality detector-grade CdMnTe crystal with good spectroscopic performance.

► CdMnTe:In ingots were grown from the Te solution vertical Bridgman method with the ACRT technique.
► The Te solution Bridgman method can effectively reduce the twins in CdMnTe crystal.
► PL spectrum and IR transmittance revealed CdMnTe crystal possessed high quality.
► The resistivity of CdMnTe crystal is 2.065×1010 Ω cm and the (μτ)e is 1.61×10−3 cm2 V−1.
► CdMnTe grown by the Te solution method can meet the demands of the nuclear detector.