کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1791702 1023617 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Formation and growth mechanism of TiC terraces during self-propagating high-temperature synthesis from a FeTiC system
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Formation and growth mechanism of TiC terraces during self-propagating high-temperature synthesis from a FeTiC system
چکیده انگلیسی

TiC terraces were prepared in situ through self-propagating high-temperature synthesis (SHS) reaction with 10 wt.% FeTiC elemental powder mixtures. The formation and growth mechanism of TiC during the SHS process were explored. The results of combustion wave quenching experiment showed that the formation mechanism of TiC could be ascribed to the dissolution of C into FeTi melt and the precipitation of TiC from the saturated melt. The X-ray diffraction, field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) analyses revealed that TiC terraces grew through the layer-by-layer mechanism along [100] direction, while thin TiC monolayer was formed by two-dimension (2D) nucleation growth mode.


► TiC terraces were prepared through SHS reaction with FeTiC powder mixtures.
► TiC grains were formed by the dissolution–reaction–precipitation mechanism.
► TiC terraces grew through the layer-by layer mechanism along [100] direction.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 355, Issue 1, 15 September 2012, Pages 140–144
نویسندگان
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