کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1791709 | 1023618 | 2012 | 5 صفحه PDF | دانلود رایگان |
ZnTe layers were grown on (111) GaAs substrates by metalorganic vapor phase epitaxy using dimethylzinc and diethyltelluride as the source materials. X-ray diffraction analysis revealed that epitaxial ZnTe layers can be obtained on (111) GaAs substrates. X-ray rocking curves, Raman spectroscopy, and photoluminescence measurements showed that the crystal quality of ZnTe layers depends on the substrate temperature during the growth. A high-crystalline quality (111) ZnTe heteroepitaxial layer with strong near-band-edge emission at 550 nm was obtained at a substrate temperature of 440 °C.
► ZnTe layers were successfully grown on (111) GaAs substrates.
► Crystal quality of ZnTe layers depends on the substrate temperature.
► Optimum of the substrate temperature leads high quality (111) ZnTe layer.
Journal: Journal of Crystal Growth - Volume 341, Issue 1, 15 February 2012, Pages 7–11