Growth and scintillation properties of Pr doped Gd3(Ga,Al)5O12 single crystals

Pr:Gd3(Ga,Al)5O12 single crystals were grown by the micro-pulling down (μ-PD) method. All grown crystals were greenish and transparent with 3.0 mm in diameter, 15–30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al3+ sites by Ga3+ in garnet structure has been studied. In these crystals, Pr3+ 5d–4f emission is observed with 340 nm wavelength. Pr1%:Gd3Ga3Al2O12 shows highest emission intensity. The light yield of Pr:Gd3Ga3Al2O12 sample with 3 mmφ×1 mm size was around 4500 photon/MeV. Scintillation decay time was 7.9 ns (0.5%), 46 ns (0.7%) and 214 ns (98.8%).

► Pr:Gd3(Ga,Al)5O12 single crystals were grown by the m-PD method.
► Pr3+ 4f–5d emission is observed in 340 nm for the first time in this host.
► Pr1%:Gd3Ga3Al2O12 shows highest emission intensity.
► The light yield of Pr:Gd3Ga3Al2O12 sample with 3φ×1 mm size was 4500 photon/MeV. Scintillation decay time was 7.9 ns (0.5%), 46 ns (0.7%) and 214 ns (98.8%).