کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1791954 | 1023626 | 2012 | 6 صفحه PDF | دانلود رایگان |
Traveling magnetic fields (TMFs) can be used to control the shape of the crystal–melt interfaces at crystal growth from melt. Here, we present the numerical results of a systematic study on the influence of a TMF generated by a KRISTMAG˜® heater-magnet module on the interface curvature of different materials varying in their electrical conductivity in a wide range (5×101 to 1.7×107 S/m) such as Ge, Si, CdTe, BaF2 and YAG. Materials were compared in the same design of environment by using results obtained for Ge as a reference. For the rescaling of the growth equipment, non-dimensional criteria were applied. Positive slightly convex crystal–melt interface can be obtained for all materials studied using moderate electrical currents.
► Numerical study on influence of a TMF on the S–L interface shape during VGF growth.
► KRISTMAG®KRISTMAG® HMM was used for a generation of Lorentz forces.
► We studied Ge, Si, CdTe, BaF2 and YAG with el. conductivity from 5 ×101 to 1.7 ×106 S/m.
► Results showed improved interface morphology for all studied materials.
Journal: Journal of Crystal Growth - Volume 338, Issue 1, 1 January 2012, Pages 208–213