Characterisation of vapour grown CdZnTe crystals using synchrotron X-ray topography

► CdZnTe single crystals were grown from the vapour phase and sliced into wafers. ► Extended defects within these wafers were analysed using synchrotron X-ray topography. ► Various defects were identified: grain-boundaries, voids, cracks and sub-grains. ► Surface damage from wire saw slicing was also observed. ► Wafer peripheries showed numerous defects; central regions were of better quality.