کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1791990 | 1023627 | 2012 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge](/preview/png/1791990.png)
In this paper, we use thermodynamic analysis to determine how the nitrogen (N) ratio in the source gases affects the solid composition of coherently grown GaAs1−xNx(x∼0.03). The source gases for Ga, As, and N are trimethylgallium ((CH3)3Ga), arsine (AsH3), and ammonia (NH3), respectively. The growth occurs on a Ge substrate, and the analysis includes the stress from the substrate–crystal lattice mismatch. Calculation results indicate that to have just a few percent N incorporation into the grown solid, the V/III ratio in the source gases should be several thousands and the input-gas partial-pressure ratio NH3/(NH3+AsH3) should exceed 0.99. We also find that the lattice mismatch stress from the Ge substrate increases the V/III source–gas ratio required for stable growth, whereas an increase in input Ga partial pressure ratio has the opposite effect.
► We performed thermodynamic analysis for coherent growth of GaAsN.
► A system using TEG, AsH3, and NH3 as the gaseous sources was analyzed.
► Incorporation of a few percent N into a solid needs an NH3/(NH3+AsH3) ratio of over 99% in input gas.
► The lattice constraint from the substrate suppresses the incorporation of nitrogen.
► Higher input Ga partial pressure ratio enhances the stable growth with a few percent of N.
Journal: Journal of Crystal Growth - Volume 343, Issue 1, 15 March 2012, Pages 105–109