Growth of CdSiP2 single crystals by self-seeding vertical Bridgman method

Using a high purity CdSiP2 polycrystalline charge synthesized in a single-temperature zone furnace, a CdSiP2 single crystal with dimensions of 8 mm in diameter and 40 mm in length was successfully grown by the vertical Bridgman method. The quality of the crystal was characterized by high resolution X-ray diffraction and the full width at half maximum (FWHM) of the rocking curve for the (200) face is 33″. Thermal property measurements show that: the mean specific heat of CdSiP2 between 300 and 773 K is 0.476 J g−1 K−1; the thermal conductivity of the crystal along the a- and c-axes is 13.6 W m−1 K−1 and 13.7 W m−1 K−1 at 295 K, respectively; and the thermal expansion coefficient measured along the a- and c-axes is 8.4×10−6 K−1 and −2.4×10−6 K−1, respectively. The optical transparency range of the crystal is 578–10,000 nm, and there is no absorption loss in the spectrum from 0.7 to 2.5 μm, as often exists with ZnGeP2 crystals grown from the melt.

► Pure phase CdSiP2 polycrystalline was synthesized by single-temperature zone method.
► A dimension of ø8×40 mm CdSiP2 single crystal was grown by the vertical Bridgman method.
► Specific heat, thermal conductivity, and thermal expansion coefficient of the crystal were measured.
► The optical transparency range of CdSiP2 is 578 nm–10 μm.