Growth and properties of the single AgCd2GaSe4 crystals

►Single crystals of the quaternary phase AgCd2GaSe4 were grown using the method of directed crystallization. ►Energy gap of the crystals was estimated ∼1.7 eV at T=293 K. ►Defect band with an activation energy of ∼0.30 eV in the upper half of the energy band gap was identified. ►The disorder parameter of ∼0.079 eV was evaluated. ►Density of the point defects responsible for the absorption edge blurring was determined to be ∼1.4×1020 cm−3.