کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792374 | 1023642 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of Ar vs. O2 ambient on pulsed-laser-deposited Ga-doped ZnO
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of Ar vs. O2 ambient on pulsed-laser-deposited Ga-doped ZnO Effects of Ar vs. O2 ambient on pulsed-laser-deposited Ga-doped ZnO](/preview/png/1792374.png)
چکیده انگلیسی
Ga-doped ZnO films were deposited by pulsed laser deposition (PLD) at 200 °C and 10 mTorr in either pure argon (Ar films) or in oxygen (O2 films). The bulk resistivity of the Ar films is <2Ã10â4 Ω cm at 300 K, two orders of magnitude lower than that of the O2 films. In the Ar films, the donor concentration ND as determined by a detailed Hall-effect analysis is close to 100% of the total Ga concentration [Ga] measured by secondary ion mass spectrometry (SIMS), while in the O2 films ND is less than 50% of [Ga]. Furthermore, the compensation ratio K=NA/ND is >90% for the O2 films and <60% for the Ar films. Yet, when the oxygen pressure is reduced to 0.2 mTorr, the O2 films have resistivities of about 5Ã10â4 Ω cm, approaching those of the Ar films. These results suggest that oxygen-rich environments produce Ga/O complexes that reduce the dopant activation efficiency and thus decrease ND and increase K. Some of these complexes may also contribute to the increase in deep centers observed in photoluminescence.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 324, Issue 1, 1 June 2011, Pages 110-114
Journal: Journal of Crystal Growth - Volume 324, Issue 1, 1 June 2011, Pages 110-114
نویسندگان
Robin C. Scott, Kevin D. Leedy, Burhan Bayraktaroglu, David C. Look, Yong-Hang Zhang,