کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1792463 1023645 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Hot-wire CVD of Ge nanoparticles on Si-etched silicon dioxide
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Hot-wire CVD of Ge nanoparticles on Si-etched silicon dioxide
چکیده انگلیسی

Germanium nanoparticles are grown on SiO2 by hot-wire chemical vapor deposition of GeH4. Etching of the silica surface by low doses of SiHx (x=1, 2, 3) prior to Ge deposition is found to increase the nanoparticle density by up to an order of magnitude. This result is attributed to the creation of defects during the etching reaction in proportion to the SiHx flux that serve as nucleation sites for Ge particles. Mean particle sizes of ∼5 nm and areal densities over 1×1012 cm−2 are obtained using these techniques.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 321, Issue 1, 15 April 2011, Pages 131–135
نویسندگان
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