کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792476 | 1023646 | 2011 | 4 صفحه PDF | دانلود رایگان |

In this study, Cd1−xZnxTe crystals, with x=0.20, were grown unseeded by closed-ampoule vertical directional solidification (Bridgman) technique under controlled Cd over-pressures. CdZnTe crystals of high electrical resistivity have been reproducibly obtained with the In dopant concentration of 4–6 ppm, atomic and a Cd reservoir temperature between 785 and 825 °C. A combination of three process modifications have contributed to the accomplishment: (1) homogenizing the ampoules of starting materials under the vacuum environment to minimize contamination, (2) performing growth under controlled Cd over-pressures with the optimal In dopant, and (3) controlling post-growth cooling procedures to maintain uniformity of electrical properties over the crystal.
Journal: Journal of Crystal Growth - Volume 319, Issue 1, 15 March 2011, Pages 4–7