| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 1792499 | 1023648 | 2010 | 8 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Chemically assisted vapour transport for bulk ZnO crystal growth
												
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																																												کلمات کلیدی
												
											موضوعات مرتبط
												
													مهندسی و علوم پایه
													فیزیک و نجوم
													فیزیک ماده چگال
												
											پیش نمایش صفحه اول مقاله
												 
												چکیده انگلیسی
												A chemically assisted vapour phase transport (CVT) method is proposed for the growth of bulk ZnO crystals. Thermodynamic computations have confirmed the possibility of using CO as a sublimation activator for enhancing the sublimation rate of the feed material in a large range of pressures (10â3 to 1 atm) and temperatures (800-1200 °C). Growth runs in a specific and patented design yielded single ZnO crystals up to 46 mm in diameter and 8 mm in thickness, with growth rates up to 400 μm/h. These values are compatible with an industrial production rate. N type ZnO crystals (μ=182 cm2/(V s) and n=7 1015 cmâ3) obtained by this CVT method (Chemical Vapour Transport) present a high level of purity (10-30 times better than hydrothermal ZnO crystals), which may be an advantage for obtaining p-type doped layers ([Li] and [Al] <10+15 cmâ3). Structural (HR-XRD), defect density (EPD), electrical (Hall measurements) and optical (photoluminescence) properties are presented.
											ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 23, 15 November 2010, Pages 3417-3424
											Journal: Journal of Crystal Growth - Volume 312, Issue 23, 15 November 2010, Pages 3417-3424
نویسندگان
												Jean-Louis Santailler, Claire Audoin, Guy Chichignoud, Rémy Obrecht, Belkhiri Kaouache, Pascal Marotel, Denis Pelenc, Stéphane Brochen, Jérémy Merlin, Isabelle Bisotto, Carole Granier, Guy Feuillet, François Levy,