کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792830 | 1023659 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impact of amorphous Ge thin layer at the amorphous Si/Al interface on Al-induced crystallization
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Impact of amorphous Ge thin layer at the amorphous Si/Al interface on Al-induced crystallization Impact of amorphous Ge thin layer at the amorphous Si/Al interface on Al-induced crystallization](/preview/png/1792830.png)
چکیده انگلیسی
We investigated the impact of an amorphous Ge (a-Ge) thin layer inserted at the amorphous Si (a-Si)/Al interface on Al-induced crystallization. In situ observation of the growth process clarified that the nucleation rate is drastically reduced by insertion of a-Ge, which led to increase in the average size of crystal grains. This was interpreted as resulting from decrease in the driving force of crystallization, mainly due to the larger solubility of Ge in Al than that of Si in Al. The obtained films were SiGe alloys with lateral distribution of Ge content, and its origin is discussed based on the two-step nucleation process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 22, 1 November 2010, Pages 3257–3260
Journal: Journal of Crystal Growth - Volume 312, Issue 22, 1 November 2010, Pages 3257–3260
نویسندگان
Hidehiro Suzuki, Noritaka Usami, Akiko Nomura, Toetsu Shishido, Kazuo Nakajima, Takashi Suemasu,