InN layers grown by MOCVD on SrTiO3SrTiO3 substrates

Epitaxial wurtzite InN thin films have been grown by metal-organic chemical vapor deposition on (1 1 1) SrTiO3SrTiO3 (STO) substrates. Interestingly, twin domain epitaxy induced by the surface reconstruction of STO is observed with the in-plane orientation relationships of [1¯100]InN∥[1¯10]STO and [21¯1¯0]InN∥[1¯10]STO, which is helpful to release the strain. The InN films on STO substrates exhibit a strong photoluminescence emission around 0.78 eV. Particularly, using STO substrates opens up a possibility to integrate InN with the functional oxides.