کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793148 1023667 2010 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Stacking pattern of multi-layer InAs quantum wires embedded in In0.53Ga0.47−xAlxAs matrix layers grown lattice-matched on InP substrate
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Stacking pattern of multi-layer InAs quantum wires embedded in In0.53Ga0.47−xAlxAs matrix layers grown lattice-matched on InP substrate
چکیده انگلیسی

Multi-layer InAs quantum wires were grown on, and embedded in In0.53Ga0.47−xAlxAs (with x=0, 0.1, 0.3 and 0.48) barrier/spacer layers lattice matched to an InP substrate. Correlated stacking of the quantum wire arrays were observed with aluminum content of 0 and 0.1. The quantum wire stacks became anti-correlated as the aluminum content was increased to 0.3 and 0.48. The origin of such stacking pattern variation was investigated by finite element calculations of the chemical potential distribution for indium on the growth front surface of the capping spacer layer. It is shown that the stacking pattern transition is determined by the combined effect of strain and surface morphology on the growth front of the spacer layers.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 19, 15 September 2010, Pages 2637–2646
نویسندگان
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