کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793180 1023667 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth and interface study of 2 in diameter CdZnTe by THM technique
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Growth and interface study of 2 in diameter CdZnTe by THM technique
چکیده انگلیسی

Growth interface of large diameter CdZnTe ingots grown from Te solution by travelling heater method have been studied. Both macroscopic and microscopic investigations were carried out. The results indicated that the shape of the interface strongly governs the grain growth on the ingot, while the microscopic morphology of the growth interface is responsible for Te inclusions in the grown crystal.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 19, 15 September 2010, Pages 2840–2845
نویسندگان
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