کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793189 | 1023668 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A catalyst-free method to silicon nanowires at relative low temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A catalyst-free method to silicon nanowires at relative low temperature A catalyst-free method to silicon nanowires at relative low temperature](/preview/png/1793189.png)
چکیده انگلیسی
Well-crystallized straight Si nanowires (SiNWs) were successfully prepared in large scale via a facile reaction between NaN3 and Na2SiF6 at 600 °C without using any catalyst. Characterization by X-ray powder diffraction and transmission electron microscopy demonstrates that the as-obtained product is pure-phase cubic SiNWs with diameters of 40 nm or so, and lengths of several micrometers. And the SiNWs with spherical tips can be obtained at a temperature as low as 300 °C. Heating temperature and holding time have crucial influence on the synthesis and morphology of the SiNWs. An oxide-assisted growth mechanism is responsible for the formation of the SiNWs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 24, 1 December 2010, Pages 3579-3582
Journal: Journal of Crystal Growth - Volume 312, Issue 24, 1 December 2010, Pages 3579-3582
نویسندگان
Hui-Ling Zhu, Ning Lun, Zheng Zhang, Rui Liu, Xiang-Lin Meng, Bo Zhang, Fu-Dong Han, Yu-Jun Bai, Jian-Qiang Bi, Run-Hua Fan,