کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793401 1023675 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Room temperature ferromagnetism and ferroelectricity behavior of (Cu, Li) co-doped ZnO films deposited by reactive magnetron sputtering
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Room temperature ferromagnetism and ferroelectricity behavior of (Cu, Li) co-doped ZnO films deposited by reactive magnetron sputtering
چکیده انگلیسی

Single-phase Zn0.95−xCuxLi0.05O thin films have been prepared on Pt (1 1 1)/Ti/SiO2 substrates by reactive magnetron sputtering method. The XRD, XPS and absorption measurements confirmed the polycrystalline nature of the films and the substitution of Zn2+ by Cu2+ ions. The sputtered Zn0.90Cu0.05Li0.05O film shows multiferroic properties exhibiting a saturated ferroelectric loop with a remanent polarization of 6 μC/cm2 and a saturated loop with a saturation magnetization of 0.43 μB/Cu at room temperature. The origins of the ferromagnetism and ferroelectricity in these films are discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 7, 15 March 2010, Pages 906–909
نویسندگان
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