کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793406 1023675 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Mass flux of ZnSe–N–H–Cl chemical vapor transport (CVT) system
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Mass flux of ZnSe–N–H–Cl chemical vapor transport (CVT) system
چکیده انگلیسی

The vapor transport properties in ZnSe–N–H–Cl CVT systems are interpreted based on the one-dimensional diffusion-limited model. The growth rate J is calculated to be 3.5–3.7×10−9 mol cm−2 s−1 at the temperature difference ΔT of 5 K between the source and the growth ends in the systems of ZnSe–NH4Cl, ZnSe–NH4Cl+Se and ZnSe–ZnCl2·2NH4Cl (AZC-II)+Se. The values related to the critical stability parameters of surface, Jcrit and ΔTcrit, are about 2.6×10−9 mol cm−2 s−1 and 3.5 K, respectively. J is not dependent on the amount of NH4Cl among the concentration range from 0.5 to 5.0 mg mL−1. The deviation from stoichiometry of the source material hardly affects on J when AZC-II and Se were added. The experimental investigations of transport rate are carried out using the seeded and un-seeded ampoules with various tip angles. The experimental growth rate Jexp and its critical values well agree with the calculated results. A critical temperature difference up to 5–7 K is obtained in the vertical manner growth.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 7, 15 March 2010, Pages 933–938
نویسندگان
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