کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793472 1023677 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural property of m-plane ZnO epitaxial film grown on LaAlO3 (1 1 2) substrate
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Structural property of m-plane ZnO epitaxial film grown on LaAlO3 (1 1 2) substrate
چکیده انگلیسی
The microstructure of m-plane (1 0 1¯ 0) ZnO grown on LaAlO3 (1 1 2) (LAO (1 1 2)) substrate by pulsed laser deposition method has been investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). XRD shows that ZnO grown on LAO(1 1 2) appears to be oriented in pure m-plane. TEM electron diffraction patterns in cross section illustrate that m-plane ZnO is in epitaxy with LAO (1 1 2), and the orientation relationships are determined to be [1 2¯ 1 0]ZnO//[1¯ 1¯ 1]LAO and [0 0 0 1]ZnO//[1¯ 1 0]LAO. Also, TEM shows that most of threading dislocations (TDs) in a-type are mainly distributed as wiggle-like lines. From the observations in plan-view TEM, the densities of TDs and basal stacking faults are approximately estimated to be 5.1×1010 cm−2 and 4.3×105 cm−1, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 8, 1 April 2010, Pages 1179-1182
نویسندگان
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