کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793539 | 1023678 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nanocrystalline Pr-doped ZnO insulator for metal-insulator-Si Schottky diodes
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Pr-doped ZnO (ZnO:Pr) insulating thin films were prepared on glass and Si substrates by oxidation in air. The films were characterised by X-ray diffraction (XRD), energy dispersion X-ray fluorescence (EDXRF), and optical absorption spectroscopy. The molar ratio Pr/Zn of the samples was determined by the EDXRF method. The XRD study shows the formation of nanocrystalline (26-50Â nm) nc-Pr-doped ZnO. The optical and electrical conduction were explained by a slight change of stoichiometric composition. The nc-ZnO:Pr/Si heterojunctions are being Schottky barrier diodes (SBDs) and exhibited high rectification behaviour. The parameters describe the current pass through those SBDs were determined according to the available models.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 17, 15 August 2009, Pages 4183-4187
Journal: Journal of Crystal Growth - Volume 311, Issue 17, 15 August 2009, Pages 4183-4187
نویسندگان
A.A. Dakhel,