Orientation control of LaNiO3 thin films by RF magnetron sputtering with different oxygen partial pressure

Highly (1 1 0)- and (1 0 0)-oriented LaNiO3 (LNO) thin films were successfully grown on Si (1 0 0) substrate using radio frequency (RF) magnetron sputtering at room temperature (RT). Effects of oxygen partial pressures on the orientation, film composition, surface morphology, and electrical properties of the films were investigated. The nearly complete (1 0 0) orientation was first achieved with oxygen partial pressure beyond 15% in the sputtering gas. The preferred (1 0 0) orientation of growing films is determined by uniform distribution of Ni3+ and La/Ni ratio in the films caused by oxygen during sputtering, as well as the lowest surface energy of the films in the crystalline process. LNO films with controlled orientation have low resistivity of 7.0×10−6 Ω m which is a good basis for integrating ferroelectric capacitors.